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This paper reports the fabrication of β-Ga 2 O 3 nanomembrane (NM) based flexible photodetectors (PDs) and the investigation of their optoelectrical properties under bending conditions. Flexible β-Ga 2 O 3 NM PDs exhibited reliable solar-blind photo-detection under bending conditions. Interestingly, a slight shifting in wavelength of the maximum solar-blind photo-current was observed under the bending condition. To investigate the reason for this peak shifting, the optical properties of β-Ga 2 O 3 NMs under different strain conditions were measured, which revealed changes in the refractive index, extinction coefficient and bandgap of strained β-Ga 2 O 3 NMs due to the presence of nano-sized cracks in the β-Ga 2 O 3 NMs. The results of a multiphysics simulation and a density-functional theory calculation for strained β-Ga 2 O 3 NMs showed that the conduction band minimum and the valence band maximum states were shifted nearly linearly with the applied uniaxial strain, which caused changes in the optical properties of the β-Ga 2 O 3 NM. We also found that nano-gaps in the β-Ga 2 O 3 NM play a crucial role in enhancing the photoresponsivity of the β-Ga 2 O 3 NM PD under bending conditions due to the secondary light absorption caused by reflected light from the nano-gap surfaces. Therefore, this research provides a viable route to realize high-performance flexible photodetectors, which are one of the indispensable components in future flexible sensor systems. 

Accurate and efficient predictions of the quasiparticle properties of complex materials remain a major challenge due to the convergence issue and the unfavorable scaling of the computational cost with respect to the system size. QuasiparticleGWcalculations for two-dimensional (2D) materials are especially difficult. The unusual analytical behaviors of the dielectric screening and the electron self-energy of 2D materials make the conventional Brillouin zone (BZ) integration approach rather inefficient and require an extremely densek-grid to properly converge the calculated quasiparticle energies. In this work, we present a combined nonuniform subsampling and analytical integration method that can drastically improve the efficiency of the BZ integration in 2DGWcalculations. Our work is distinguished from previous work in that, instead of focusing on the intricate dielectric matrix or the screened Coulomb interaction matrix, we exploit the analytical behavior of various terms of the convolved self-energy Σ(q) in the smallqlimit. This method, when combined with another acceleratedGWmethod that we developed recently, can drastically speed up (by over three orders of magnitude)GWcalculations for 2D materials. Our method allows fully convergedGWcalculations for complex 2D systems at a fraction of computational cost, facilitating future high throughput screening of the quasiparticle properties of 2D semiconductors for various applications. To demonstrate the capability and performance of our new method, we have carried out fully convergedGWcalculations for monolayer C₂N, a recently discovered 2D material with a large unit cell, and investigate its quasiparticle band structure in detail.